PART |
Description |
Maker |
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
SD1400-2 RF347 SD1400 SD1400-02 |
RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
PTF10036 |
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
PTB20091 |
30 Watts, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
PTF10162 |
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
1011LD200 |
200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
PTF080101S PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
|
INFINEON[Infineon Technologies AG]
|
1011LD110 |
RF Power Transistors: AVIONICS 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
MAAV-007087-000100 MAAV-007087-0001TB MAAV-007087- |
900 MHz - 2500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX Voltage Variable Attenuator 900 - 2500 MHz
|
Tyco Electronics
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|